Zhang, Yi, Zhang, Yongjie, Gu, Kaixuan, Zhang, Linfeng, Zhu, Yuanmin, Liu, Dianzi and Deng, Hui (2023) A general and ultrafast polishing method with truly atomic roughness. The Journal of Physical Chemistry Letters, 14 (42). 9441–9447. ISSN 1948-7185
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Abstract
The advancement of science and technology is always accompanied by better manufacturing precision. Ideally, the highest precision for manufacturing a surface is truly atomic flatness, which implies that all topmost surface atoms are in a single layer of the crystal face. However, almost no methods can achieve this surface with high efficiency at present. Herein, we present a method to fabricate a large-scale truly atomically flat surface with ultrafast speed. Through the selective etching of surface atoms, our method can achieve an atomically flat surface with 0.05 nm Sa roughness. It is notable that the polishing efficiency of our method is more than 1000 times higher than that of conventional methods. We have demonstrated its generality on various single-crystal materials and obtained atomic roughness and an ultrahigh polishing rate. This method has the potential to promote the mass-production of atomic-scale smooth surfaces, the application of third-generation semiconductor materials, and the innovation of advanced technologies.
Item Type: | Article |
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Additional Information: | Acknowledgments: This project is supported by the National Natural Science Foundation of China (52005243) and the Science and Technology Innovation Committee of Shenzhen Municipality (JCYJ20220818100412027, JCYJ20210324120402007). The authors acknowledge the assistance of SUSTech Core Research Facilities. |
Faculty \ School: | Faculty of Science > School of Engineering (former - to 2024) |
UEA Research Groups: | Faculty of Science > Research Groups > Sustainable Energy Faculty of Science > Research Groups > Materials, Manufacturing & Process Modelling |
Depositing User: | LivePure Connector |
Date Deposited: | 18 Oct 2023 00:42 |
Last Modified: | 07 Nov 2024 12:47 |
URI: | https://ueaeprints.uea.ac.uk/id/eprint/93354 |
DOI: | 10.1021/acs.jpclett.3c02322 |
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