Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Zhang, Ying, Li, Rulin, Zhang, Yongjie, Liu, Dianzi and Deng, Hui (2019) Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching. Journal of the European Ceramic Society, 39 (9). pp. 2831-2838. ISSN 0955-2219

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Abstract

To reveal dislocations in SiC wafers, conventionally, molten KOH etching method has been widely used. However, when highly doped sites exist on the wafer, the molten KOH etching method is not applicable owing to the enhanced isotropic electrochemical etching phenomenon. In this study, plasma etching is first applied to reveal dislocations in a 4H-SiC wafer with both highly doped and lightly doped areas. The mechanisms of dislocation revelation by dry etching have been theoretically analyzed and it has been revealed that the dislocation revelation ability of dry etching is highly related to the temperature of the etching process. The results demonstrate that inductively coupled plasma (ICP) etching can maintain its effectiveness for dislocation revelation of SiC wafers regardless of the doping concentrations. This work offers an alternative approach to indiscriminately and accurately reveal dislocations in SiC wafers.

Item Type:	Article
Faculty \ School:	Faculty of Science > School of Engineering (former - to 2024)
UEA Research Groups:	Faculty of Science > Research Groups > Sustainable Energy Faculty of Science > Research Groups > Materials, Manufacturing & Process Modelling
Depositing User:	LivePure Connector
Date Deposited:	18 Mar 2019 13:30
Last Modified:	07 Nov 2024 12:40
URI:	https://ueaeprints.uea.ac.uk/id/eprint/70260
DOI:	10.1016/j.jeurceramsoc.2019.03.026

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