Rapid subsurface damage detection of SiC using inductivity coupled plasma

Zhang, Yi, Zhang, Linfeng, Chen, Keyu, Liu, Dianzi, Lu, Dong and Deng, Hui (2021) Rapid subsurface damage detection of SiC using inductivity coupled plasma. International Journal of Extreme Manufacturing, 3 (3). ISSN 2631-7990

Preview

PDF (Published_Version) - Published Version Available under License Creative Commons Attribution. Download (3MB) | Preview

Abstract

This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.

Item Type:	Article
Uncontrolled Keywords:	icp etching,ssd detection,silicon carbide,subsurface damage,industrial and manufacturing engineering ,/dk/atira/pure/subjectarea/asjc/2200/2209
Faculty \ School:	Faculty of Science > School of Engineering
Related URLs:	http://www.scopus.com/inward/record.url?...
Depositing User:	LivePure Connector
Date Deposited:	18 May 2021 00:09
Last Modified:	23 Oct 2022 02:27
URI:	https://ueaeprints.uea.ac.uk/id/eprint/80031
DOI:	10.1088/2631-7990/abff34

Downloads

Actions (login required)

View Item