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Hwang, Dong-Hyun, Ahn, Jung-Hoon, Hui, Kwan-Nam, Hui, Kwan-San 
ORCID: https://orcid.org/0000-0001-7089-7587 and Son, Young-Guk
(2011)
Effect of oxygen partial pressure contents on the properties of Al-doped ZnO thin films prepared by radio frequency sputtering.
Journal of Ceramic Processing Research, 12 (2).
pp. 150-154.
ISSN 1229-9162
Abstract
Al-doped Zinc Oxide (AZO) films were deposited on glass substrates by radio frequency (R.F.) magnetron sputtering technique. The properties of the films were controlled by adjusting the oxygen flow contents as a mixture of Ar and O2 gases. The structural, electrical and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), a UV-visible spectrometer, as well as Hall effect measurements. Results revealed that a film deposited with an oxygen partial pressure content of 0% had a hexagonal structure, a strongly preferred orientation with the c-axis perpendicular to the substrate and the lowest resistivity of about 6.9 × 10-4 Ω cm. The optical transmittance spectra showed more than 80% transmittance in the visible region, and the band gap was found to be direct. Strong violet emission located at 2.96 eV was observed in the AZO films deposited with an oxygen partial pressure content of 0%.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | al-doped zno film,magnetron sputtering,oxygen partial pressure |
| Faculty \ School: | Faculty of Science > School of Mathematics (former - to 2024) |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 21 Sep 2017 05:06 |
| Last Modified: | 25 Sep 2024 13:01 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/64935 |
| DOI: |
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