Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs

Wang, Shuo, Hui, K. S., Hui, K. N., Sambasivam, S., Zhang, X. L., Cho, Y. R., Kim, In-Hong, Lee, Woo-Jin, Kyhm, Kwangseuk and Park, Jung-Chul (2016) Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs. Journal of Materials Science: Materials in Electronics, 27 (3). pp. 2809-2815. ISSN 0957-4522

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Abstract

A green emitting Ba1.98SiO4−δN2/3δ:Eu0.02 phosphor with an appreciable intensity was synthesized using the gas-reduction–nitridation (GRN) method. SEM revealed agglomerated Ba1.98SiO4−δN2/3δ:Eu0.02 particles with irregular morphologies and a primary particle size of 1–2.5 μm. The phosphor showed emission lines of Eu2+ corresponding to the 4f65d1 → 4f7 transition under 370 nm excitation. As the GRN process was conducted to incorporate N3− into the lattice, both the excitation and emission intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 were enhanced greatly compared to Ba1.98SiO4:Eu0.02. The decay time of Ba1.98SiO4−δN2/3δ:Eu0.02 showed that N entered the Ba1.98SiO4:Eu0.02 lattices to replace O to form a NO point defect. The electroluminescence intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 at 503 nm increased with increasing forward bias current. Intense green LEDs were fabricated by coating the synthesized phosphors on the cap of the near-ultraviolet InGaN LEDs (λem = 375 nm). Overall, this phosphor appears to be a promising candidate for solid-state lighting applications.

Item Type: Article
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 09 Nov 2016 16:00
Last Modified: 22 Apr 2020 01:46
URI: https://ueaeprints.uea.ac.uk/id/eprint/61299
DOI: 10.1007/s10854-015-4094-9

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