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Wang, Shuo, Hui, K. S. 
ORCID: https://orcid.org/0000-0001-7089-7587, Hui, K. N., Sambasivam, S., Zhang, X. L., Cho, Y. R., Kim, In-Hong, Lee, Woo-Jin, Kyhm, Kwangseuk and Park, Jung-Chul
(2016)
Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs.
Journal of Materials Science: Materials in Electronics, 27 (3).
pp. 2809-2815.
ISSN 0957-4522
Abstract
A green emitting Ba1.98SiO4−δN2/3δ:Eu0.02 phosphor with an appreciable intensity was synthesized using the gas-reduction–nitridation (GRN) method. SEM revealed agglomerated Ba1.98SiO4−δN2/3δ:Eu0.02 particles with irregular morphologies and a primary particle size of 1–2.5 μm. The phosphor showed emission lines of Eu2+ corresponding to the 4f65d1 → 4f7 transition under 370 nm excitation. As the GRN process was conducted to incorporate N3− into the lattice, both the excitation and emission intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 were enhanced greatly compared to Ba1.98SiO4:Eu0.02. The decay time of Ba1.98SiO4−δN2/3δ:Eu0.02 showed that N entered the Ba1.98SiO4:Eu0.02 lattices to replace O to form a NO point defect. The electroluminescence intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 at 503 nm increased with increasing forward bias current. Intense green LEDs were fabricated by coating the synthesized phosphors on the cap of the near-ultraviolet InGaN LEDs (λem = 375 nm). Overall, this phosphor appears to be a promising candidate for solid-state lighting applications.
| Item Type: | Article |
|---|---|
| Faculty \ School: | Faculty of Science > School of Mathematics (former - to 2024) |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 09 Nov 2016 16:00 |
| Last Modified: | 25 Sep 2024 12:15 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/61299 |
| DOI: | 10.1007/s10854-015-4094-9 |
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