Characterization of Sn-doped CuO thin films prepared by a sol–gel method

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Wu, Jing, Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587, Hui, K. N., Li, Lei, Chun, Ho-Hwan and Cho, Y. R. (2016) Characterization of Sn-doped CuO thin films prepared by a sol–gel method. Journal of Materials Science: Materials in Electronics, 27 (2). pp. 1719-1724. ISSN 0957-4522

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Abstract

This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 1015–1.08 × 1016 cm−3, 6.14–10.5 cm2/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.

Item Type: Article
Faculty \ School: Faculty of Science > School of Mathematics (former - to 2024)
UEA Research Groups: Faculty of Science > Research Groups > Energy Materials Laboratory
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Depositing User: Pure Connector
Date Deposited: 09 Nov 2016 16:00
Last Modified: 25 Sep 2024 12:15
URI: https://ueaeprints.uea.ac.uk/id/eprint/61298
DOI: 10.1007/s10854-015-3945-8

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