High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method

Xia, Q. X., Hui, K. S., Hui, K. N., Hwang, D. H., Singh, Jai, Cho, Y. R., Lee, S. K., Zhou, W., Wan, Z. P., Ha Thuc, Chi-Nhan and Son, Y. G. (2012) High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method. Materials Letters, 78. pp. 180-183. ISSN 0167-577X

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High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.

Item Type: Article
Uncontrolled Keywords: al-doped zno,ammonia-assisted,hydrothermal growth,nanorods,p-type
Faculty \ School: Faculty of Science > School of Mathematics
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Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 22 Apr 2020 01:47
URI: https://ueaeprints.uea.ac.uk/id/eprint/60718
DOI: 10.1016/j.matlet.2012.03.066

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