High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method

Xia, Q. X., Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587, Hui, K. N., Hwang, D. H., Singh, Jai, Cho, Y. R., Lee, S. K., Zhou, W., Wan, Z. P., Ha Thuc, Chi-Nhan and Son, Y. G. (2012) High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method. Materials Letters, 78. pp. 180-183. ISSN 0167-577X

Full text not available from this repository.

Abstract

High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.

Item Type: Article
Uncontrolled Keywords: al-doped zno,ammonia-assisted,hydrothermal growth,nanorods,p-type
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 14 Aug 2022 11:30
URI: https://ueaeprints.uea.ac.uk/id/eprint/60718
DOI: 10.1016/j.matlet.2012.03.066

Actions (login required)

View Item View Item