Xia, Q. X., Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587, Hui, K. N., Hwang, D. H., Singh, Jai, Cho, Y. R., Lee, S. K., Zhou, W., Wan, Z. P., Ha Thuc, Chi-Nhan and Son, Y. G. (2012) High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method. Materials Letters, 78. pp. 180-183. ISSN 0167-577X
Full text not available from this repository.Abstract
High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.
Item Type: | Article |
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Uncontrolled Keywords: | al-doped zno,ammonia-assisted,hydrothermal growth,nanorods,p-type |
Faculty \ School: | Faculty of Science > School of Engineering (former - to 2024) University of East Anglia Research Groups/Centres > Theme - ClimateUEA |
UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory Faculty of Science > Research Groups > Emerging Technologies for Electric Vehicles (EV) |
Related URLs: | |
Depositing User: | Pure Connector |
Date Deposited: | 04 Oct 2016 12:02 |
Last Modified: | 25 Sep 2024 12:16 |
URI: | https://ueaeprints.uea.ac.uk/id/eprint/60718 |
DOI: | 10.1016/j.matlet.2012.03.066 |
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