Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Li, Lei, Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587, Hui, K. N., Park, H. W., Hwang, D. H., Cho, Shinho, Lee, S. K., Song, P. K., Cho, Y. R., Lee, Heesoo, Son, Y. G. and Zhou, W. (2012) Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method. Materials Letters, 68. pp. 283-286. ISSN 0167-577X

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Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

Item Type:	Article
Uncontrolled Keywords:	al-doped zno,nio,p-type,sol-gel method,transparent conducting oxide
Faculty \ School:	Faculty of Science > School of Mathematics (former - to 2024)
UEA Research Groups:	Faculty of Science > Research Groups > Energy Materials Laboratory
Related URLs:	http://www.scopus.com/inward/record.url?...
Depositing User:	Pure Connector
Date Deposited:	04 Oct 2016 12:02
Last Modified:	25 Sep 2024 12:16
URI:	https://ueaeprints.uea.ac.uk/id/eprint/60717
DOI:	10.1016/j.matlet.2011.10.089

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