Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer

Hui, Kwun Nam, Hui, Kwan San ORCID: https://orcid.org/0000-0001-7089-7587, Xia, Qixun, Cuong, Tran Viet, Cho, Young-Rae, Singh, Jai, Kumar, Pushpendra and Kim, Eui Jung (2013) Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer. ECS Solid State Letters, 2 (6). ISSN 2162-8742

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Abstract

High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio ?18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface.

Item Type: Article
Faculty \ School: Faculty of Science > School of Mathematics
UEA Research Groups: Faculty of Science > Research Groups > Energy Materials Laboratory
Related URLs:
Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 04 Mar 2024 17:32
URI: https://ueaeprints.uea.ac.uk/id/eprint/60713
DOI: 10.1149/2.005306ssl

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