In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering

Kwon, Se-Hun, Kwon, Na-Hyun, Song, Pung-Keun, Hui, Kwun Nam, Hui, Kwan-San and Cho, Young-Rae (2012) In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering. Materials Letters, 73. pp. 62-64. ISSN 0167-577X

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Abstract

Sn thin films were grown by DC magnetron sputtering on a soda-lime glass and Si substrate. The in-situ electrical resistance of the films was measured during the film growth. The minimum continuous thickness of the films was difficult to determine by using the conventional plot of R × d 2 versus d and could only be approximately calculated to be near 20 to 25 nm. On the other hand, a new empirical method using the plot of R × d 3 versus d gave a value of 16 nm for the minimum continuous Sn film thickness. The minimum continuous thickness of Sn films obtained from field-emission scanning electron microscopy and X-ray photoemission spectroscopy analyses was 16 nm. The new empirical method proposed here has the potential to determine the exact minimum continuous thickness of the films.

Item Type: Article
Uncontrolled Keywords: crystal growth,electronic materials,nanomaterials,sputtering,thin films
Faculty \ School: Faculty of Science > School of Mathematics
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Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 22 Apr 2020 01:47
URI: https://ueaeprints.uea.ac.uk/id/eprint/60709
DOI: 10.1016/j.matlet.2012.01.020

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