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Kwon, Se-Hun, Kwon, Na-Hyun, Song, Pung-Keun, Hui, Kwun Nam, Hui, Kwan-San 
ORCID: https://orcid.org/0000-0001-7089-7587 and Cho, Young-Rae
(2012)
In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering.
Materials Letters, 73.
pp. 62-64.
ISSN 0167-577X
Abstract
Sn thin films were grown by DC magnetron sputtering on a soda-lime glass and Si substrate. The in-situ electrical resistance of the films was measured during the film growth. The minimum continuous thickness of the films was difficult to determine by using the conventional plot of R × d 2 versus d and could only be approximately calculated to be near 20 to 25 nm. On the other hand, a new empirical method using the plot of R × d 3 versus d gave a value of 16 nm for the minimum continuous Sn film thickness. The minimum continuous thickness of Sn films obtained from field-emission scanning electron microscopy and X-ray photoemission spectroscopy analyses was 16 nm. The new empirical method proposed here has the potential to determine the exact minimum continuous thickness of the films.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | crystal growth,electronic materials,nanomaterials,sputtering,thin films |
| Faculty \ School: | Faculty of Science > School of Mathematics (former - to 2024) |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 04 Oct 2016 12:02 |
| Last Modified: | 25 Sep 2024 12:16 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/60709 |
| DOI: | 10.1016/j.matlet.2012.01.020 |
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