Low resistivity p-type Zn1-xAlxO:Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method

Hui, K. N., Hui, K. S., Li, Lei, Cho, Y. R. and Singh, Jai (2013) Low resistivity p-type Zn1-xAlxO:Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method. Materials Research Bulletin, 48 (1). pp. 96-100. ISSN 0025-5408

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Abstract

Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

Item Type: Article
Uncontrolled Keywords: a. semiconductors,a. thin films,b. chemical synthesis,d. electrical properties,d. optical properties
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 22 Apr 2020 01:47
URI: https://ueaeprints.uea.ac.uk/id/eprint/60704
DOI: 10.1016/j.materresbull.2012.10.013

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