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Hui, K. N., Hui, K. S. 
ORCID: https://orcid.org/0000-0001-7089-7587, Li, Lei, Cho, Y. R. and Singh, Jai
(2013)
Low resistivity p-type Zn1-xAlxO:Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method.
Materials Research Bulletin, 48 (1).
pp. 96-100.
ISSN 0025-5408
Abstract
Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | a. semiconductors,a. thin films,b. chemical synthesis,d. electrical properties,d. optical properties |
| Faculty \ School: | Faculty of Science > School of Mathematics |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 04 Oct 2016 12:02 |
| Last Modified: | 22 Oct 2022 01:38 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/60704 |
| DOI: | 10.1016/j.materresbull.2012.10.013 |
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