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Zhang, X. L., Hui, K. S. 
ORCID: https://orcid.org/0000-0001-7089-7587 and Hui, K. N.
(2013)
High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering.
Materials Research Bulletin, 48 (2).
pp. 305-309.
ISSN 0025-5408
Abstract
High performance ultraviolet (UV) detectors based on ZnO metal-semiconductor-metal (MSM) and p-n heterojunctions, p-NiO/n-ZnO, were fabricated and their UV photo-responsivity was measured at room temperature. High-quality ZnO and NiO thin films were deposited on quartz substrates at room temperature under optimized RF reactive sputtering conditions. For ZnO-based MSM UV detectors using Al as a contact metal, the linear current-voltage (I-V) characteristics under a forward bias exhibited ohmic metal-semiconductor contact. A maximum photocurrent and photo-responsivity of 2.5 mA and 1410 A/W, respectively, at 365 nm under 5 V bias was observed, indicating the high photo-responsivity of the ZnO MSM detector. In comparison, a p-NiO/n-ZnO p-n heterojunction UV detector demonstrated clear rectifying I-V characteristics with an ideality factor, forward threshold voltage and photo-responsivity of 2, 0.9 V and 0.09 A/W, respectively, at 362 nm under a reverse bias of 4 V, which is close to that of the commercial GaN UV detector (∼0.1 A/W).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | a. semiconductors,a. thin films,d. electrical properties,d. optical properties |
| Faculty \ School: | Faculty of Science > School of Mathematics (former - to 2024) |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 30 Sep 2016 16:00 |
| Last Modified: | 25 Sep 2024 12:15 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/60650 |
| DOI: | 10.1016/j.materresbull.2012.10.030 |
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