Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

Lee, JongWoo, Hui, K. N., Hui, K.S., Cho, Y. R. and Chun, Ho-Hwan (2014) Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power. Applied Surface Science, 293. pp. 55-61. ISSN 0169-4332

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Abstract

Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.

Item Type: Article
Uncontrolled Keywords: al-doped zno,dc magnetron sputtering,electrical properties,nio,transparent conducting oxide
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 24 Sep 2016 00:54
Last Modified: 22 Apr 2020 01:44
URI: https://ueaeprints.uea.ac.uk/id/eprint/60263
DOI: 10.1016/j.apsusc.2013.12.071

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