Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

Lee, JongWoo, Hui, K. N., Hui, K.S. ORCID: https://orcid.org/0000-0001-7089-7587, Cho, Y. R. and Chun, Ho-Hwan (2014) Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power. Applied Surface Science, 293. pp. 55-61. ISSN 0169-4332

Full text not available from this repository.

Abstract

Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.

Item Type:	Article
Uncontrolled Keywords:	al-doped zno,dc magnetron sputtering,electrical properties,nio,transparent conducting oxide
Faculty \ School:	Faculty of Science > School of Mathematics (former - to 2024)
UEA Research Groups:	Faculty of Science > Research Groups > Energy Materials Laboratory
Related URLs:	http://www.scopus.com/inward/record.url?...
Depositing User:	Pure Connector
Date Deposited:	24 Sep 2016 00:54
Last Modified:	25 Sep 2024 12:12
URI:	https://ueaeprints.uea.ac.uk/id/eprint/60263
DOI:	10.1016/j.apsusc.2013.12.071

Actions (login required)

View Item