Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering

Jo, Young Dae, Hui, K. N., Hui, K.S., Cho, Y. R. and Kim, Kwang Ho (2014) Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering. Materials Research Bulletin, 51. pp. 345-350. ISSN 0025-5408

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Abstract

Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.

Item Type: Article
Uncontrolled Keywords: a. composites,a. thin films,b. sputtering,c. x-ray diffraction,d. optical properties
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 24 Sep 2016 00:54
Last Modified: 24 Jul 2019 22:46
URI: https://ueaeprints.uea.ac.uk/id/eprint/60261
DOI: 10.1016/j.materresbull.2013.12.026

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