Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering

Jo, Young Dae, Hui, K. N., Hui, K.S. ORCID: https://orcid.org/0000-0001-7089-7587, Cho, Y. R. and Kim, Kwang Ho (2014) Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering. Materials Research Bulletin, 51. pp. 345-350. ISSN 0025-5408

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Abstract

Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.

Item Type: Article
Uncontrolled Keywords: a. composites,a. thin films,b. sputtering,c. x-ray diffraction,d. optical properties
Faculty \ School: Faculty of Science > School of Mathematics
Related URLs:
Depositing User: Pure Connector
Date Deposited: 24 Sep 2016 00:54
Last Modified: 22 Oct 2022 01:32
URI: https://ueaeprints.uea.ac.uk/id/eprint/60261
DOI: 10.1016/j.materresbull.2013.12.026

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