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Jo, Young Dae, Hui, K. N., Hui, K.S. 
ORCID: https://orcid.org/0000-0001-7089-7587, Cho, Y. R. and Kim, Kwang Ho
(2014)
Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering.
Materials Research Bulletin, 51.
pp. 345-350.
ISSN 0025-5408
Abstract
Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | a. composites,a. thin films,b. sputtering,c. x-ray diffraction,d. optical properties |
| Faculty \ School: | Faculty of Science > School of Mathematics (former - to 2024) |
| UEA Research Groups: | Faculty of Science > Research Groups > Energy Materials Laboratory |
| Related URLs: | |
| Depositing User: | Pure Connector |
| Date Deposited: | 24 Sep 2016 00:54 |
| Last Modified: | 25 Sep 2024 12:12 |
| URI: | https://ueaeprints.uea.ac.uk/id/eprint/60261 |
| DOI: | 10.1016/j.materresbull.2013.12.026 |
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