High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure, Nandu B., Cammidge, Andrew N., Chambrier, Isabelle, Cook, Michael J., Cain, Markys G., Murphy, Craig E., Pal, Chandana and Ray, Asim K. (2011) High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors. Science and Technology of Advanced Materials, 12 (2). ISSN 1468-6996

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Abstract

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

Item Type:	Article
Faculty \ School:	Faculty of Science > School of Chemistry (former - to 2024)
UEA Research Groups:	Faculty of Science > Research Groups > Chemistry of Materials and Catalysis Faculty of Science > Research Groups > Chemistry of Light and Energy Faculty of Science > Research Groups > Synthetic Chemistry (former - to 2017)
Depositing User:	Pure Connector
Date Deposited:	09 Jun 2014 13:56
Last Modified:	20 May 2025 14:30
URI:	https://ueaeprints.uea.ac.uk/id/eprint/48627
DOI:	10.1088/1468-6996/12/2/025001

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