Double-resonance technique for C/V measurements of semiconductor devices

de Cogan, D. and Alani, A. (1985) Double-resonance technique for C/V measurements of semiconductor devices. IEE Electronics Letters, 21 (24). pp. 1153-1154. ISSN 0013-5194

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Abstract

A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.

Item Type:	Article
Faculty \ School:	Faculty of Science > School of Computing Sciences
Depositing User:	EPrints Services
Date Deposited:	01 Oct 2010 13:41
Last Modified:	24 Sep 2024 10:36
URI:	https://ueaeprints.uea.ac.uk/id/eprint/3085
DOI:	10.1049/el:19850816

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