High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering

Zhang, X. L., Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587 and Hui, K. N. (2013) High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering. Materials Research Bulletin, 48 (2). pp. 305-309. ISSN 0025-5408

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Abstract

High performance ultraviolet (UV) detectors based on ZnO metal-semiconductor-metal (MSM) and p-n heterojunctions, p-NiO/n-ZnO, were fabricated and their UV photo-responsivity was measured at room temperature. High-quality ZnO and NiO thin films were deposited on quartz substrates at room temperature under optimized RF reactive sputtering conditions. For ZnO-based MSM UV detectors using Al as a contact metal, the linear current-voltage (I-V) characteristics under a forward bias exhibited ohmic metal-semiconductor contact. A maximum photocurrent and photo-responsivity of 2.5 mA and 1410 A/W, respectively, at 365 nm under 5 V bias was observed, indicating the high photo-responsivity of the ZnO MSM detector. In comparison, a p-NiO/n-ZnO p-n heterojunction UV detector demonstrated clear rectifying I-V characteristics with an ideality factor, forward threshold voltage and photo-responsivity of 2, 0.9 V and 0.09 A/W, respectively, at 362 nm under a reverse bias of 4 V, which is close to that of the commercial GaN UV detector (∼0.1 A/W).

Item Type:	Article
Uncontrolled Keywords:	a. semiconductors,a. thin films,d. electrical properties,d. optical properties
Faculty \ School:	Faculty of Science > School of Mathematics
UEA Research Groups:	Faculty of Science > Research Groups > Energy Materials Laboratory
Related URLs:	http://www.scopus.com/inward/record.url?...
Depositing User:	Pure Connector
Date Deposited:	30 Sep 2016 16:00
Last Modified:	22 Oct 2022 01:36
URI:	https://ueaeprints.uea.ac.uk/id/eprint/60650
DOI:	10.1016/j.materresbull.2012.10.030

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