Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

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Hwang, Dong Hyun, Ahn, Jung Hoon, Hui, Kwun Nam, Hui, Kwan San ORCID: https://orcid.org/0000-0001-7089-7587 and Son, Young Guk (2012) Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering. Nanoscale Research Letters, 7. ISSN 1931-7573

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Abstract

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se 2 solar cells.

Item Type: Article
Additional Information: © 2012 Hwang et al; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
Uncontrolled Keywords: cd-free buffer layer,rf magnetron sputtering,solar cell,zns film
Faculty \ School: Faculty of Science > School of Mathematics
UEA Research Groups: Faculty of Science > Research Groups > Energy Materials Laboratory
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Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 12:02
Last Modified: 21 Oct 2022 07:30
URI: https://ueaeprints.uea.ac.uk/id/eprint/60707
DOI: 10.1186/1556-276X-7-26

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