Pc-Si and c-Si cell studies at transient and steady state conditions in various illumination levels

Kaplani, Eleni ORCID: https://orcid.org/0000-0002-4987-4388, Papadouris, P. and Kaplanis, Socrates (2011) Pc-Si and c-Si cell studies at transient and steady state conditions in various illumination levels. Journal of Energy and Power Engineering, 5. pp. 48-54. ISSN 1934-8983

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Abstract

A set of experiments was designed to study the power performance of a c-Si and a pc-Si cell when exposed to various levels of high illumination. The light concentration ratio, C, ranges from C<1, up to C≈26. An experimental set up was built for the purposes of this project. PV cell modeling is outlined in this paper for isc, Voc and the PV cell temperature, Tc, which predicts those quantities. There the behaviour of the two PV-cells at both transient out steady state conditions is studied. Predicted values are compared against measured ones. A comparison of the experimental values against the theoretically predicted ones is performed for the range C<1 to C≈26. Power recovery is tried through heat removal from both sides of the PV-cells by air forced flow. Experiments show recovery whose degree is close to 100% for low C values. On the other hand, as C grows higher, Pm starts decreasing too. PV cell temperatures reached up to 136℃ for C=25. This is a challenge as reduction of temperature delivers a good amount of heat, in the cogeneration effect, while it has a positive impact to power recovery of the PV cell.

Item Type: Article
Faculty \ School: Faculty of Science > School of Mathematics
Depositing User: Pure Connector
Date Deposited: 11 Nov 2015 12:00
Last Modified: 12 Sep 2023 09:30
URI: https://ueaeprints.uea.ac.uk/id/eprint/55096
DOI:

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