Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor

Algara-Siller, Gerardo, Severin, Nikolai, Chong, Samantha Y., Björkman, Torbjörn, Palgrave, Robert G., Laybourn, Andrea, Antonietti, Markus, Khimyak, Yaroslav Z. ORCID: https://orcid.org/0000-0003-0424-4128, Krasheninnikov, Arkady V., Rabe, Jürgen P., Kaiser, Ute, Cooper, Andrew I., Thomas, Arne and Bojdys, Michael J. (2014) Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor. Angewandte Chemie International Edition, 53 (29). pp. 7450-7455. ISSN 1433-7851

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Abstract

Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

Item Type: Article
Uncontrolled Keywords: carbon nitride,graphene,semiconductor,thin films
Faculty \ School: Faculty of Science > School of Pharmacy
Depositing User: Pure Connector
Date Deposited: 01 Aug 2014 10:46
Last Modified: 22 Sep 2022 19:30
URI: https://ueaeprints.uea.ac.uk/id/eprint/49855
DOI: 10.1002/anie.201402191

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