Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor

Algara-Siller, Gerardo, Severin, Nikolai, Chong, Samantha Y., Björkman, Torbjörn, Palgrave, Robert G., Laybourn, Andrea, Antonietti, Markus, Khimyak, Yaroslav Z., Krasheninnikov, Arkady V., Rabe, Jürgen P., Kaiser, Ute, Cooper, Andrew I., Thomas, Arne and Bojdys, Michael J. (2014) Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor. Angewandte Chemie International Edition, 53 (29). pp. 7450-7455. ISSN 1433-7851

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Abstract

Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

Item Type: Article
Uncontrolled Keywords: carbon nitride,graphene,semiconductor,thin films
Faculty \ School: Faculty of Science > School of Pharmacy
Depositing User: Pure Connector
Date Deposited: 01 Aug 2014 10:46
Last Modified: 17 Mar 2020 20:05
URI: https://ueaeprints.uea.ac.uk/id/eprint/49855
DOI: 10.1002/anie.201402191

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