Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)

Hunt, Michael R. C., Montalti, Massimo, Chao, Yimin ORCID: https://orcid.org/0000-0002-8488-2690, Krishnamurthy, Satheesh, Dhanak, Vinod R. and Šiller, Lidija (2002) Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111). Applied Physics Letters, 81 (25). pp. 4847-4849. ISSN 1077-3118

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Abstract

The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650+/-10 degreesC) substantially lower than the analogous reaction for adsorbed C-60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced. (C) 2002 American Institute of Physics.

Item Type:	Article
Faculty \ School:	Faculty of Science > School of Chemistry
UEA Research Groups:	Faculty of Science > Research Groups > Physical and Analytical Chemistry (former - to 2017) Faculty of Science > Research Groups > Chemistry of Materials and Catalysis Faculty of Science > Research Groups > Energy Materials Laboratory
Depositing User:	Rachel Smith
Date Deposited:	09 May 2011 15:55
Last Modified:	24 Oct 2022 03:19
URI:	https://ueaeprints.uea.ac.uk/id/eprint/30066
DOI:	10.1063/1.1530747

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