Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Li, Lei, Hui, K. S., Hui, K. N., Park, H. W., Hwang, D. H., Cho, Shinho, Lee, S. K., Song, P. K., Cho, Y. R., Lee, Heesoo, Son, Y. G. and Zhou, W. (2012) Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method. Materials Letters, 68. pp. 283-286. ISSN 0167-577X

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Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

Item Type: Article
Uncontrolled Keywords: al-doped zno,nio,p-type,sol-gel method,transparent conducting oxide
Faculty \ School: Faculty of Science > School of Mathematics
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Depositing User: Pure Connector
Date Deposited: 04 Oct 2016 13:02
Last Modified: 15 Jul 2019 11:37
URI: https://ueaeprints.uea.ac.uk/id/eprint/60717
DOI: 10.1016/j.matlet.2011.10.089

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