Enhanced light output of angled sidewall light-emitting diodes with reflective silver films

Hui, K. N., Hui, K. S. ORCID: https://orcid.org/0000-0001-7089-7587, Lee, Heesoo, Hwang, Dong-Hyun and Son, Young-Guk (2011) Enhanced light output of angled sidewall light-emitting diodes with reflective silver films. Thin Solid Films, 519 (8). pp. 2504-2507. ISSN 0040-6090

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Abstract

A proof-of-concept of applying laser micro-machining to fabricate high performance GaN light-emitting diode (LED) was presented in this study. Laser micro-machining was applied to fabricate GaN LED chip with angled sidewalls (ALED). The inclined sapphire sidewalls were coated with highly reflective silver film which functions as an efficient light out-coupling medium for photons within the LED structure. Thus, more laterally-propagating photons can be redirected to the upward direction of the ALED with silver coating (Ag-ALED). Performances of the Ag-ALED, ALED and conventional planar GaN LED were evaluated. At an injection current of 30 mA, the light output intensity of Ag-ALED was significantly improved by 97% and 195% as compared to ALED and conventional planar LED, respectively. The corresponding wall-plug efficiency of Ag-ALED was remarkably increased by 95% and 193% as compared to ALED and conventional planar LED, respectively. The results of this study demonstrated that the Ag-ALED showed a pronounced increase in light output intensity compared to conventional planar LED, which may have many potential applications in the field of display engineering.

Item Type:	Article
Uncontrolled Keywords:	gallium nitride,high light extraction efficiency,inclined sidewalls,light-emitting diodes
Faculty \ School:	Faculty of Science > School of Mathematics
UEA Research Groups:	Faculty of Science > Research Groups > Energy Materials Laboratory
Related URLs:	http://www.scopus.com/inward/record.url?...
Depositing User:	Pure Connector
Date Deposited:	04 Oct 2016 12:02
Last Modified:	22 Oct 2022 01:38
URI:	https://ueaeprints.uea.ac.uk/id/eprint/60702
DOI:	10.1016/j.tsf.2010.12.007

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