Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)

Hunt, M. R. C., Montalti, M., Chao, Y.M., Krishnamurthy, S., Dhanak, V. R. and Siller, L. (2002) Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111). Applied Physics Letters, 81 (25). pp. 4847-4849. ISSN 1077-3118

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Abstract

The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650+/-10 degreesC) substantially lower than the analogous reaction for adsorbed C-60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced. (C) 2002 American Institute of Physics.

Item Type: Article
Faculty \ School: Faculty of Science > School of Chemistry
Depositing User: Rachel Smith
Date Deposited: 09 May 2011 16:55
Last Modified: 05 Nov 2018 15:31
URI: https://ueaeprints.uea.ac.uk/id/eprint/30066
DOI: 10.1063/1.1530747

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